ssf5508d preliminary www.goodark.com page 1 of 6 rev.1.0 main product characteristics v dss 60v typ r ds (on) 3.8mohm typ i d 110a features and benefits ssf5508d top view (dpak) ? advanced trench mosfet process technology ? special designed for convertors and power controls ? ultra low on-resistance ? 150 operating temperature ? high avalanche capability and 100% tested ? lead free product description it utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. these features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. absolute max rating symbol parameter max. units id @ tc = 25c continuous drain current, vgs @ 10v 110 id @ tc = 100c continuous drain current, vgs @ 10v 80 idm pulsed drain current 440 i sm pulsed source current.(body diode) 400 a power dissipation 170 w pd @tc = 25c linear derating factor 2 w/ c ? v ds drain-source voltage 55 v vgs gate-to-source voltage 20 v dv/dt peak diode recovery voltage 35 v/ns eas single pulse avalanche energy @ l=0.3mh 735 mj iar avalanche current @ l=0.3mh 65 a tj tstg operating junction and storage temperature range -55 to + 150 c thermal resistance symbol characterizes value unit r jc junction-to-case 0.73 /w r ja junction-to-ambient ( t 10s) 50 /w
ssf5508d preliminary www.goodark.com page 2 of 6 rev.1.0 electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max units conditions bvdss drain-to-source breakdown voltage 55 60 v vgs = 0v, id = 250a rds(on) static drain-to-source on-resistance 3.8 5 m vgs = 10v, id = 20a vgs(th) gate threshold voltage 2 3 4 v vds = vgs, id = 250a 1 vds = 55v, vgs = 0v idss drain-to-source leakage current 10 a vds = 55v, vgs = 0v, tj = 150c gate-to-source forward leakage 100 vgs =20v igss gate-to-source reverse leakage -100 na vgs = -20v qg total gate charge 124.77 120 qgs gate-to-source charge 24.46 30 qgd gate-to-drain("miller") charge 48.68 30 qg(th) gate charge at shreshold 16 20 nc vplateau gate plateau voltage 4.7 6 v id=30a vdd=30v vgs=10v td(on) turn-on delay time 19.62 tr rise time 18.82 td(off) turn-off delay time 69.76 tf fall time 30.12 ns vdd=30v id=2a ,rl=15 rg=2.5 vgs=10v ciss input capacitance 5607 coss output capacitance 463 crss reverse transfer capacitance 454 pf vgs = 0v, vds = 25v, ? = 1.0mhz source-drain ratings and characteristics symbol parameter min. typ. max units conditions is maximum body-diode continuous current 110 a vsd diode forward voltage 0.77 1 v is=40a, vgs=0v trr reverse recovery time 36 ns qrr reverse recovery charge 57 nc tj = 25c, if =68a, , di/dt = 100a/s ton forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld)
ssf5508d preliminary www.goodark.com page 3 of 6 rev.1.0 typical electrical and thermal characteristics figure 1: typical output characteristics figure 2: typical transfer characteristics figure 3: on-resistance vs. drain current and figure 4: on-resistance vs. junction gate voltage temperature figure 5: on-resistance vs. gate-source voltage figure 6: body-diode characteristics 0 10 20 30 40 50 60 70 80 90 100 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 vds,drain to source voltage(v) id,drain current(a) 10v 7v 6v 3.5v 4v 4.5v 5v 0 10 20 30 40 50 60 70 80 90 100 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 vgs,gate to source voltage(v) id,drain to source current(a) 125 25 vds=vgs 3 4 5 6 0 5 10 15 20 25 30 id,drain current(a) rdson,drain-to-source on resistance(normalized) vgs=7v vgs=10v 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 0 25 50 75 100 125 150 175 200 tj,junction temperature(c) rdson,drain-to-source on resistance(normalized) vgs=10v id=20a vgs=7v id=20a 0 5 10 15 20 25 2 3 4 5 6 7 8 9 10 vgs,gate to source voltage(v) rdson,drain-to-source on resistance(normalized) 125 25 id=20a 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 vsd,source to drain voltage(v) is,source to drain current(a) 125 25
ssf5508d preliminary www.goodark.com page 4 of 6 rev.1.0 typical electrical and thermal characteristics figure 7: gate-charge characteristics figure 8: capacitance characteristics figure 9: maximum forward biased safe figure 10: single pulse power rating operating area( ) junction-to-case ( ) figure 11: power de-rating ( ) figure 12: current de-rating ( ) 0.1 1 10 100 1000 0.01 0.1 1 10 100 vds,drain to source voltage(v) id,drain current(a) 10us 100us 1ms 10ms dc ron limited tj(max)=150 tc=25
ssf5508d preliminary www.goodark.com page 5 of 6 rev.1.0 typical electrical and thermal characteristics figure 13: transient thermal impedance curve notes: the maximum current rating is limited by bond-wires. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature, using junction-to-case thermal resistance. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c.
ssf5508d preliminary www.goodark.com page 6 of 6 rev.1.0 dpak (to-252) mechanical data
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